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NTMYS010N04CLTWG

Name: onsemi NTMYS010N04CLTWG
Brand: onsemi
SKU: 863-NTMYS010N04CLTWG
Price: 0.62 EUR
Availability: OutOfStock

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Mouser No:

863-NTMYS010N04CLTWG

Mfr. No:

NTMYS010N04CLTWG

Mfr.:

onsemi

Description:

MOSFETs T6 40V LL LFPAK

Datasheet:

NTMYS010N04CLTWG Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	10.3 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	7.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	28 W
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	onsemi
Configuration:	Single
Fall Time:	2 ns
Forward Transconductance - Min:	33 S
Product Type:	MOSFETs
Rise Time:	43 ns
Series:	NTMYS010N04CL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	11 ns
Typical Turn-On Delay Time:	7 ns
Unit Weight:	75 mg

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Datasheet

NTMYS010N04CLTWG Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Philippines
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with superior soft body diode. The Trench6 N-Channel MV MOSFETs from onsemi are available in a wide range of small-footprint packages for design flexibility.

NTMYS010N04CL 40V Industrial Power MOSFET

onsemi NTMYS010N04CL 40V Industrial Power MOSFET features a small 5mm x 6mm footprint, low R_DS(on), low Gate Charge (Q_G), and low capacitance. The low R_DS(on) value helps to minimize conduction losses, while the low Q_G and low capacitance minimize driver losses. This single N-channel power MOSFET is Pb-free, RoHS-compliant, and features a wide, industrial-grade -55°C to +175°C operating temperature range.