Low Power HYPERRAM®

Winbond Low Power HYPERRAMs® are mobile DRAM with a high-speed SDRAM device internally configured as an 8-bank memory and uses a Double Data Rate (DDR) architecture on the Command/Address (CA) bus. This HYPERRAM features low pin count, low power consumption, and easy control to improve the performance of end devices. These IoT edge devices and human-machine interface devices require functionality in size, power consumption, and performance. These HYPERRAM memory devices provide technical solutions and address the rapid rise of IoT edge devices and human-machine interface devices. These HYPERRAMs offer 45mW power at 1.8V in hybrid sleep mode, significantly different from the standby mode of SDRAM. The HYPERRAM supports the HyperBus interface and is a solution to address the rapid rise of automotive electronics, industrial 4.0, and smart home applications.

Sonuçlar: 2
Seçin Resim Parça Numarası Ürt. Açıklama Veri Sayfası Stok Durumu Fiyatlandırma (EUR) Tablodaki sonuçları sipariş verdiğiniz miktar uyarınca birim fiyata göre filtreleyin. Miktar RoHS ECAD Modeli Tip Bellek Boyutu Veri Yolu Genişliği Maksimum Saat Frekansı Paket / Kasa Kurum Erişim süresi Besleme Voltajı - Min Besleme Voltajı - Maks Minimum Çalışma Sıcaklığı Maksimum Çalışma Sıcaklığı Paketleme
Winbond DRAM 128Mb HyperRAM x8, 200MHz, Ind temp, 3.0V 440Stokta Var
480Siparişte
Min.: 1
Çoklu.: 1
Maks.: 100

HyperRAM 128 Mbit 8 bit 200 MHz TFBGA-24 16 M x 8 35 ns 2.7 V 3.6 V - 40 C + 85 C Tray
Winbond DRAM 128Mb HyperRAM x8, 200MHz, Ind temp, 1.8V, T&R 2.000Stokta Var
Min.: 1
Çoklu.: 1
Maks.: 100
: 2.000

HyperRAM 128 Mbit 8 bit 200 MHz TFBGA-24 16 M x 8 1.7 V 2 V - 40 C + 85 C Reel, Cut Tape