CA SiC MOSFETs

Sonuçlar: 1.274
Seçin Resim Parça Numarası Ürt. Açıklama Veri Sayfası Stok Durumu Fiyatlandırma (EUR) Tablodaki sonuçları sipariş verdiğiniz miktar uyarınca birim fiyata göre filtreleyin. Miktar RoHS ECAD Modeli Montaj Stili Paket / Kasa Transistör Polaritesi Kanal Sayısı Vds - Tahliye-Kaynak Arıza Voltajı Id - Sürekli Tahliye Akımı Rds Açık - Tahliye-Kaynağı Direnci Vgs - Kapı-Kaynağı Voltajı Vgs th - Kapı-Kaynağı Eşik Voltajı Qg - Kapı Şarjı Minimum Çalışma Sıcaklığı Maksimum Çalışma Sıcaklığı Pd - Güç Dağılımı Kanal Modu Vasıf Ticari Unvan
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology 187Stokta Var
Min.: 1
Çoklu.: 1

Through Hole PG-TO247-4-U07 N-Channel 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 107Stokta Var
Min.: 1
Çoklu.: 1
Makara: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 53 A 41.3 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
APC-E SiC MOSFETs 650V 50mR, TO-247-4L, Automotive Grade 270Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 140Stokta Var
Min.: 1
Çoklu.: 1
Makara: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
IXYS SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L 78Stokta Var
800Beklenen 2.06.2026
Min.: 1
Çoklu.: 1
Makara: 800

SMD/SMT TO-263-7L N-Channel 1 Channel 1.2 kV 65 A 53 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 417 W Enhancement
APC-E SiC MOSFETs 1200V 75mR, TO-247-4L, Industrial Grade 268Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 750 V G2 140Stokta Var
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 42 A 50 mOhms - 7 V, 23 V 5.6 V 30 nC - 55 C + 175 C 156 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 70Stokta Var
Min.: 1
Çoklu.: 1
Makara: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
APC-E SiC MOSFETs 1200V 75mR, TO-247-4L, Automotive Grade 290Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 58Stokta Var
Min.: 1
Çoklu.: 1
Makara: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 750 V G2 133Stokta Var
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 64 A 31 mOhms - 7 V, 23 V 5.6 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC
IXYS SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L 100Stokta Var
450Beklenen 2.06.2026
Min.: 1
Çoklu.: 1
Makara: 450

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 65 A 52 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 375 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 140Stokta Var
Min.: 1
Çoklu.: 1
Makara: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
APC-E SiC MOSFETs 650V 50mR, TO-247-4L, Industrial Grade 288Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 40Stokta Var
Min.: 1
Çoklu.: 1
Makara: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 220 A 9 mOhms - 7 V, + 23 V 5.6 V 164 nC - 55 C + 175 C 789 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC Automotive Power Device 750 V G2 28Stokta Var
750Beklenen 23.04.2026
Min.: 1
Çoklu.: 1
Makara: 750

SMD/SMT HD-SOP-22 N-Channel 1 Channel 750 V 53 A 65.6 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 750 V G2 118Stokta Var
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 50 A 41.3 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 750 V G2 140Stokta Var
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 29 A 78 mOhms - 7 V, 23 V 5.6 V 20 nC - 55 C + 175 C 116 W Enhancement CoolSiC
Central Semiconductor SiC MOSFETs 1700V Through-Hole MOSFET N-Channel SiC 27Stokta Var
Min.: 1
Çoklu.: 1
Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 26 A 40 mOhms 20 V 2.4 V - 55 C + 175 C 28 W Depletion
Wolfspeed SiC MOSFETs SiC, MOSFET, 21mohm, 1200V, TO-263-7 XL T&R, Industrial 233Stokta Var
Min.: 1
Çoklu.: 1
Makara: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 248 A 35 mOhms - 8 V, + 19 V 3.8 V 169 nC - 40 C + 175 C 500 W Enhancement
onsemi SiC MOSFETs 750V/18MOSICFETG4TO263-7 1.240Stokta Var
Min.: 1
Çoklu.: 1
Makara: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET

onsemi SiC MOSFETs SIC MOS TO247-3L 650V 1.292Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi SiC MOSFETs 750V/9MOSICFETG4TO263-7 688Stokta Var
Min.: 1
Çoklu.: 1
Makara: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET
Infineon Technologies SiC MOSFETs SIC_DISCRETE 799Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 60 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 175 C 150 mW Enhancement CoolSiC
onsemi SiC MOSFETs SIC MOS TO247-4L 650V 428Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC