iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs
iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ power MOSFETs are designed for high‑efficiency switching applications. These MOSFETs feature ultra‑low RDS(on) of 5.5mΩ, enabling reduced conduction losses and improved thermal performance. With the low switching losses (QSW and EOSS) and 112 nC gate charge, these MOSFETs enhance efficiency in both full‑ and partial‑load conditions. The iS20M5R5S1T MOSFETs are fully UIS‑tested and provide high Short‑Circuit Withstand Capability (SCWC) for improved reliability. These power MOSFETs support a high continuous drain current of 151A, making them suitable for demanding power stages like motor control, synchronous rectification, and SMPS designs.
Features
- Industry-leading RDS(on) in TOLL package
- High Short-Circuit Withstand Capability (SCWC)
- 100% UIS tested in production
- Low switching losses, QSW, and EOSS
- Easier parallelling with ±0.5V gate threshold
- Pb-free and Halogen-free
- RoHS compliant
Applications
- Motor control
- Boost converters and SMPS control FETs
- Secondary side synchronous rectifier
Specifications
- 200V (VDS) drain to source voltage
- 5.5mΩ RDS(on) drain to source on-resistance (maximum)
- 151A (ID) continuous drain current
- 112nC (QG) gate charge
- 8.3nC (QSW) switching charge
- 4μJ (EOSS) capacitive stored energy
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iDEAL Semiconductor SuperQ™ Technology
Redefines the fundamental structure of the power MOSFET at the atomic level, from 50% to 95%.