Infineon Technologies Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon CoolSiC Schottky Diodes provide a relatively high on-state resistance and leakage current. In SiC material, Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of SiC Schottky products covers 600V and 650V to 1200V Schottky diodes. Combining a fast silicon-based switch with a CoolSiC Schottky diode is often termed a "hybrid" solution. In recent years, Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products in applications like solar and UPS.

Infineon CoolSiC SiC MOSFETs are built on a state-of-the-art trench concept that sets a benchmark. This allows for the lowest application losses and the highest reliability in operation. The temperature-independent low switching losses and a fast, internal free-wheeling diode rated for hard commutation make the CoolSiC MOSFETs in discrete packages ideal for both hard and resonant-switching topologies.

Application Benefits

• Solar application benefits
     • Doubles the inverter power at the same inverter weight
     • Has a significantly less efficiency reduction at high operating temperatures compared to Si-based alternatives
• Energy storage systems benefits
     • Cuts losses by up to 50%
     • Increases the energy by up to 2% without increasing battery size
• Server and telecom power benefits
     • Cuts losses by up to 30%
     • Doubles the density for reaching
• EV charging benefits
     • Cuts charging time in half
     • Reduces the component number by 50% yet boosting efficiency

xEV applications

• Main inverter benefits
     • Increases the battery utilization by 5-10%
     • Increases power density for system size reductions of up to 80%
• Onboard chargers benefits
     • Can realize smaller bi-directional 3-phase chargers
     • Helps downsize passive components thanks to faster switching
• HV DC-DC converters benefits
     • Offers higher switching frequencies
     • Enhances power density

Enhanced generation 1 CoolSiC M1H

The enhanced generation 1 CoolSiC allows a significantly larger gate operation window, improving the on-resistance for a given die size. At the same time, the larger gate operation window provides high robustness against voltage peaks at the gate without any restrictions, even at higher switching frequencies.

Features and benefits
• Extended operating conditions without compromising the reliability for a more convenient design-in
    • Flexible gate-source voltage window
    • Maximum rated gate-source voltages are extended to 23V and -10V to cover over-and undershoots
• Maximum junction temperature of T_vjop of 175°C
• Threshold voltage stability under real application conditions 

Applications
• CoolSiC MOSFETs M1H are used in fast-switching applications like photovoltaic, UPS, fuel cells, EV charging, or storage systems

.XT for discrete SiC MOSFETs

Specific requirements have become mandatory for some applications, like long operation hours or high power density. To meet this demand, Infineon has developed the advanced interconnection technology .XT for discrete products. The .XT eliminates solder joints and uses diffusion soldering to attach the CoolSiC MOSFET dies to the lead frame for more robust interconnection layers.

As a result, the thermal dissipation capability can be improved by up to 30%, and the thermo-mechanical stress is reduced, resulting in better power cycling performance.

•  Increase output current by up to 14% for the same temperature
OR
•  Increase lifetime expectancy by up to 80% when lowering the operating temperature

Infineon CooISiC MOSFETs in Servo Drives result in zero maintenance due to fanless drives. Thanks to motor and drive integration, these devices reduce cabling complexity and total losses by up to 80%.

Infineon Gate Drivers for SiC MOSFETs are recommended for driving Silicon Carbide MOSFETs. To achieve maximum system benefits when using SiC MOSFETs, it is advisable to complement them with Infineon’s EiceDRIVER gate-driver ICs to fully leverage the advantages of SiC technology. By doing so, customers will achieve improved efficiency, space and weight savings, part count reduction, and enhanced system reliability.

Choose between different EiceDRIVER gate drivers
     • Single-channel high-side compact gate driver
     • Single- and dual-output enhanced driver with short-circuit protection
     • Slew-rate control high-side driver for toughest requirements

Infineon’s SiC MOSFET drivers impress with the following parameters
     • Availability in a wide-body package with 7.6mm creepage distance
     • Suitability for operation at high ambient temperature
     • Active Miller clamp
     • Short-circuit clamping and active shutdown
     • ≥ 100kV/μs CMTI (1EDU20I12SV: ≥ 50kV/μs CMTI)
     • Precision short-circuit protection (via DESAT)
     • 12V/11V typical UVLO thresholds

Featured Products

Infineon CoolSiC Trench Power MOSFETs offer reliable and cost-effective performance in discrete packages: TO-247-3/4 pin and TO-253-7 package.

Infineon CoolSiC Trench Power MOSFETs Modules are 1200V Silicon Carbide MOSFET power modules in Easy and 62mm housing, opening up new opportunities for inverter designers to realize efficiency and power density.

Infineon CoolSiC Hybrid Modules combine an IGBT chip and a CoolSiC Schottky Diode to further extend the capability of IGBT technology.

Infineon CoolSiC Schottky Diodes are 600V, 650V, and 1200V Silicon Carbide Schottky Diodes, providing a relatively high on-state resistance and leakage current.

Infineon EiceDRIVER Gate Driver ICs are ultra-fast CoolSiC MOSFETs typically best driven by gate-driver ICs with integrated galvanic isolation.