IXYS IXSH40N120L2KHV SiC MOSFET

IXYS IXSH40N120L2KHV SiC MOSFET is an industrial-grade, single-switch SiC MOSFET exhibiting good power cycling characteristics and very fast, low-loss switching behavior. This MOSFET is designed with an ultra-fast intrinsic body diode and offers a maximum virtual junction temperature of 175°C. The IXSH40N120L2KHV MOSFET features high blocking voltage with low on-resistance and high-speed switching with low capacitance. The IXSH40N120L2KHV MOSFET is used in switch mode power supplies, solar inverters, UPS, motor drives, DC/DC converters, EV charging infrastructure, and induction heating applications.

Features

  • SiC MOSFET technology
  • 1200V with low RDS(on) of 80mΩ
  • 41A (ID) drain current
  • High blocking voltage with low on-state resistance
  • High-speed switching with low capacitance
  • Maximum virtual junction temperature of 175°C
  • Ultra-fast intrinsic body diode
  • Kelvin source contact
  • MSL-1 rated
  • RoHS compliant

Applications

  • Solar inverters
  • Switch mode power supplies
  • UPS
  • Motor drives
  • DC/DC converters
  • EV charging infrastructure
  • Induction heating

Dimensions Drawing (TO-247-4L)

Mechanical Drawing - IXYS IXSH40N120L2KHV SiC MOSFET
Yayınlandı: 2025-02-14 | Güncellenmiş: 2025-02-18