onsemi 650V EliteSiC (Silicon Carbide) MOSFETs
onsemi 650V EliteSiC (Silicon Carbide) MOSFETs use a technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The onsemi TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).Features
- Max junction temperature 175°C
- Leadless thin SMD package
- Kelvin source configuration
- Ultra low gate charge
- Low effective output capacitance
- Zero reverse recovery current of the body diode
- Low RDS(on)
- 650V rated
- 100% avalanche tested
- Pb-free, halogen-free/BFR-free and RoHS-compliant
- Moisture sensitivity Level 1 guarantee
Applications
- Telecommunication
- Cloud system
- Industrial
- Telecom power
- Server power
- UPS/ESS
- Solar
View Results ( 6 ) Page
| Parça Numarası | Veri Sayfası | Açıklama |
|---|---|---|
| NTH4L016N065M3S | ![]() |
SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L INDUSTRIAL |
| NVH4L016N065M3S | ![]() |
SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L Auto |
| NTBL060N065SC1 | ![]() |
SiC MOSFETs M2 650V SIC MOSFET 60MOHM WITH TOLL |
| NTBL075N065SC1 | ![]() |
SiC MOSFETs M2 650V SIC MOSFET 75MOHM WITH TOLL |
| NTH4L012N065M3S | ![]() |
SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L Auto |
| NVH4L012N065M3S | ![]() |
SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L INDUSTRIAL |
Yayınlandı: 2024-05-10
| Güncellenmiş: 2024-07-25

