onsemi 650V EliteSiC (Silicon Carbide) MOSFETs

onsemi 650V EliteSiC (Silicon Carbide) MOSFETs use a technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The onsemi TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).

Features

  • Max junction temperature 175°C
  • Leadless thin SMD package
  • Kelvin source configuration
  • Ultra low gate charge
  • Low effective output capacitance
  • Zero reverse recovery current of the body diode
  • Low RDS(on)
  • 650V rated
  • 100% avalanche tested
  • Pb-free, halogen-free/BFR-free and RoHS-compliant
  • Moisture sensitivity Level 1 guarantee

Applications

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • UPS/ESS
  • Solar
View Results ( 6 ) Page
Parça Numarası Veri Sayfası Açıklama
NTH4L016N065M3S NTH4L016N065M3S Veri Sayfası SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L INDUSTRIAL
NVH4L016N065M3S NVH4L016N065M3S Veri Sayfası SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L Auto
NTBL060N065SC1 NTBL060N065SC1 Veri Sayfası SiC MOSFETs M2 650V SIC MOSFET 60MOHM WITH TOLL
NTBL075N065SC1 NTBL075N065SC1 Veri Sayfası SiC MOSFETs M2 650V SIC MOSFET 75MOHM WITH TOLL
NTH4L012N065M3S NTH4L012N065M3S Veri Sayfası SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L Auto
NVH4L012N065M3S NVH4L012N065M3S Veri Sayfası SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L INDUSTRIAL
Yayınlandı: 2024-05-10 | Güncellenmiş: 2024-07-25