Qorvo QPD1026LEVB Evaluation Board
Qorvo QPD1026LEVB Evaluation Board is a demonstration and development platform for the QPD1026L GaN RF Input-Matched Transistor. The QPD1026L is a 1300W (P3dB) discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT) operating from 420MHz to 450MHz. The QPD1026L provides a linear gain of 25.9dB at 440MHz. Input prematch within the package results in easier external board matching, saving board space. The device supports both continuous wave and pulsed operations.
The Qorvo QPD1026LEVB Evaluation Board features a pre-mounted QPD1026L in an industry-standard NI-1230 air cavity package. The QPD1026L package includes an ear flange for bolt-down placement. The Evaluation Board provides an example application circuit, allowing rapid prototyping when incorporated into existing designs.
Supported Devices
Qorvo QPD1026L GaN RF Input-Matched Transistor
1300W (P3dB) discrete GaN on SiC HEMT operating from 420MHz to 450MHz.
Board Layout
Yayınlandı: 2022-02-04
| Güncellenmiş: 2022-03-11