Qorvo TGF2954 GaN on SiC HEMT

Qorvo TGF2954 Gallium-Nitride (GaN) on Silicon Carbide (SiC) High-Electron Mobility Transistor (HEMT) operates from DC to 12GHz and typically provides 44.5dBm of saturated output power (P_SAT) with a power gain of 19.6dB. This field-effect transistor (FET) can switch faster than silicon power transistors. This function, combined with its small footprint, provides more energy efficiency while creating more space for external components. Qorvo TGF2954 GaN on SiC Transistor is offered as a bare die, with chip dimensions of 1.01mm x 1.68mm x 0.10mm. It has a maximum power-added efficiency range of 71.5%, making it appropriate for high-efficiency applications. Typical applications include satellite, point-to-point, and military communications as well as marine radar, defense and aerospace, amplifiers, and broadband wireless.