onsemi NXH010P120MNF1 SiC Module
onsemi NXH010P120MNF1 SiC Module contains a 10Mohm 1200V SiC MOSFET half-bridge and an NTC thermistor in an F1 module. The module has a recommended gate voltage of 18-20V. The NXH010P120MNF1 has an improved RDS(ON) at a higher voltage and low thermal resistance.
Features
- Recommended gate voltage 18V - 20V
- Improved RDS(ON) at a higher voltage
- Low thermal resistance
- Improved efficiency or higher power density
- Options for TIM or no TIM
- Flexible solution for high-reliability thermal interface
Applications
- AC-DC Conversion
- DC-AC Conversion
- DC-DC Conversion
Schematic Diagram
Related Module
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Contains 8mΩ, 10mΩ, 15mΩ, and 30mΩ/1200V M3S MOSFETs based on half-bridge topology.
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onsemi EliteSiC
Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.
Yayınlandı: 2022-05-11
| Güncellenmiş: 2024-07-31