CoolSiC™ 650V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 650V G2 Silicon Carbide MOSFETs leverage silicon carbide's performance capabilities by enabling lower energy loss, which translates into higher efficiency during power conversion. Infineon CoolSiC 650V G2 MOSFETs provide benefits for various power semiconductor applications like photovoltaics, energy storage, DC EV charging, motor drives, and industrial power supplies. A DC fast charging station for electric vehicles equipped with CoolSiC G2 allows for up to 10% less power loss than previous generations while enabling higher charging capacity without compromising form factors.

Sonuçlar: 53
Seçin Resim Parça Numarası Ürt. Açıklama Veri Sayfası Stok Durumu Fiyatlandırma (EUR) Tablodaki sonuçları sipariş verdiğiniz miktar uyarınca birim fiyata göre filtreleyin. Miktar RoHS ECAD Modeli Montaj Stili Paket / Kasa Transistör Polaritesi Kanal Sayısı Vds - Tahliye-Kaynak Arıza Voltajı Id - Sürekli Tahliye Akımı Rds Açık - Tahliye-Kaynağı Direnci Vgs - Kapı-Kaynağı Voltajı Vgs th - Kapı-Kaynağı Eşik Voltajı Qg - Kapı Şarjı Minimum Çalışma Sıcaklığı Maksimum Çalışma Sıcaklığı Pd - Güç Dağılımı Kanal Modu Ticari Unvan
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 798Stokta Var
Min.: 1
Çoklu.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 28 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC + 175 C 124 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 771Stokta Var
Min.: 1
Çoklu.: 1
: 1.800

SMD/SMT HDSOP-16 N-Channel 1 Channel 650 V 34.7 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 187 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 849Stokta Var
Min.: 1
Çoklu.: 1
: 2.000

TOLL-8 650 V 75 mOhms
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 156Stokta Var
Min.: 1
Çoklu.: 1
: 2.000

SMD/SMT LHSOF-4 N-Channel 1 Channel 650 V 30 A 95 mOhms 5.6 V 14.9 nC - 55 C + 175 C 141 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 262Stokta Var
240Beklenen 13.08.2026
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 183Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1.930Stokta Var
Min.: 1
Çoklu.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 440 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 256Stokta Var
Min.: 1
Çoklu.: 1
: 1.000

SMD/SMT N-Channel 1 Channel 650 V 158 A 13.1 mOhms - 7 V, + 23 V 5.6 V 112 nC - 55 C + 175 C 535 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 940Stokta Var
Min.: 1
Çoklu.: 1
: 1.000

SMD/SMT N-Channel 1 Channel 650 V 68 A 33 mOhms - 7 V, + 23 V 5.6 V 42 nC - 55 C + 175 C 263 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 280Stokta Var
Min.: 1
Çoklu.: 1
: 1.000

SMD/SMT N-Channel 1 Channel 650 V 58 A 41 mOhms - 7 V, + 23 V 5.6 V 34 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 416Stokta Var
Min.: 1
Çoklu.: 1
: 1.000

SMD/SMT N-Channel 1 Channel 650 V 34.9 A 73 mOhms - 7 V, + 23 V 5.6 V 18 nC - 55 C + 175 C 148 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 901Stokta Var
Min.: 1
Çoklu.: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 94 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 499 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 499Stokta Var
Min.: 1
Çoklu.: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 97 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 394 W Enhancement
Infineon Technologies SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling 929Stokta Var
1.800Beklenen 1.10.2026
Min.: 1
Çoklu.: 1
: 1.800

SMD/SMT N-Channel 1 Channel 650 V 68 A 41 mOhms - 10 V, + 25 V 5.6 V 34 nC - 55 C + 175 C 312 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 840Stokta Var
2.000Beklenen 28.01.2027
Min.: 1
Çoklu.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 168 A 13.1 mOhms - 7V, + 23 V 4.5 V 113 nC - 55 C + 175 C 681 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 375Stokta Var
2.000Beklenen 4.02.2027
Min.: 1
Çoklu.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 81 A 33 mOhms 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 2.301Stokta Var
2.000Beklenen 6.07.2027
Min.: 1
Çoklu.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 68 A 41 mOhms - 7 V, + 23 V 5.6 V 34 nC - 55 C + 175 C 312 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 870Stokta Var
2.000Siparişte
Min.: 1
Çoklu.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 41.4 A 73 mOhms - 7 V, + 23 V 5.6 V 19 nC - 55 C + 175 C 208 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 750 V G2 1.968Stokta Var
Min.: 1
Çoklu.: 1
: 2.000

SMD/SMT PG-LHSOF-4 N-Channel 650 V 79 A 33 mOhms - 7 V to + 23 V 5.6 V 42 nC - 55 C + 175 C 357 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V G2 1.712Stokta Var
Min.: 1
Çoklu.: 1
: 2.000

SMD/SMT PG-LHSOF-4 N-Channel 650 V 68 A 41 mOhms - 7 V to + 23 V 5.6 V 34 nC - 55 C + 175 C 315 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2 259Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 130 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 26 mohm G2 538Stokta Var
240Beklenen 8.07.2027
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 64 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 33 mohm G2 237Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 53 A 41 mOhms - 10 V, + 25 V 5.6 V 34 nC - 55 C + 175 C 194 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 60 mohm G2 992Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 11.342Stokta Var
Min.: 1
Çoklu.: 1
: 2.000

SMD/SMT TO-263-7 N-Channel 1 Channel 20 mOhms Enhancement CoolSiC