High-Power Auxiliary Gate Drive Transformers

Würth Elektronik High-Power Auxiliary Gate Drive Transformers (WE-AGDT) feature an EP7 form factor and are optimized for high-speed SiC MOSFET gate driver applications up to 6W of power. This series achieves high common-mode transient immunity (CMTI) with ratings up to 100V/ns and better EMI performance. The WE-AGDT type EP7 series also meets basic isolation, according to IEC 61558-2-16 and 62368-1 safety standards. The unipolar and bipolar outputs make these transformers suitable for powering state-of-the-art SiC MOSFET gate drivers up to 6W of power as well as IGBT and power MOSFETs. Würth Elektronik High-Power Auxiliary Gate Drive Transformers are designed for a primary-side regulated flyback topology to offer a compact and reliable solution.