CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

Sonuçlar: 30
Seçin Resim Parça Numarası
 Ürt.
Açıklama Veri Sayfası Stok Durumu Fiyatlandırma (EUR) Tablodaki sonuçları sipariş verdiğiniz miktar uyarınca birim fiyata göre filtreleyin.
Miktar RoHS ECAD Modeli Montaj Stili
Paket / Kasa
Transistör Polaritesi
Kanal Sayısı
Vds - Tahliye-Kaynak Arıza Voltajı
Id - Sürekli Tahliye Akımı
Rds Açık - Tahliye-Kaynağı Direnci
Vgs - Kapı-Kaynağı Voltajı
Vgs th - Kapı-Kaynağı Eşik Voltajı
Qg - Kapı Şarjı
Minimum Çalışma Sıcaklığı
Maksimum Çalışma Sıcaklığı
Pd - Güç Dağılımı
Kanal Modu
Ticari Unvan
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Veri Sayfası
651Stokta Var
MouseReel Mevcut
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 47 A 45 mOhms - 7 V, + 20 V 5.1 V 46 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Veri Sayfası
1.148Stokta Var
MouseReel Mevcut
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 26 A 125 mOhms - 7 V, + 20 V 5.1 V 23 nC - 55 C + 175 C 136 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Veri Sayfası
345Stokta Var
MouseReel Mevcut
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 36 A 83 mOhms - 7 V, + 20 V 5.1 V 34 nC - 55 C + 175 C 181 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Veri Sayfası
444Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Veri Sayfası
1.121Stokta Var
4.000Beklenen 21.05.2026
MouseReel Mevcut
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Veri Sayfası
1.827Stokta Var
1.250Beklenen 19.03.2026
MouseReel Mevcut
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 9.8 A 450 mOhms - 10 V, + 20 V 4.5 V 11 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Veri Sayfası
179Stokta Var
MouseReel Mevcut
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 56 A 41 mOhms - 7 V, + 20 V 5.1 V 63 nC - 55 C + 175 C 300 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Veri Sayfası
594Stokta Var
MouseReel Mevcut
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 A 189 mOhms - 7 V, + 20 V 5.1 V 13.4 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Veri Sayfası
830Stokta Var
1.000Beklenen 26.02.2026
MouseReel Mevcut
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 4.7 A 468 mOhms - 7 V, + 20 V 5.1 V 5.9 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Veri Sayfası
176Stokta Var
240Beklenen 26.02.2026
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Veri Sayfası
1.180Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Veri Sayfası
1.004Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 13 A 289 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Veri Sayfası
840Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Veri Sayfası
222Stokta Var
720Beklenen 30.07.2026
Min.: 1
Çoklu.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Veri Sayfası
332Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Veri Sayfası
153Stokta Var
240Beklenen 23.02.2026
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Veri Sayfası
57Stokta Var
1.000Beklenen 16.02.2026
MouseReel Mevcut
Min.: 1
Çoklu.: 1
Makara: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 13 A 294 mOhms - 7 V, + 20 V 5.1 V 9.4 nC - 55 C + 175 C 83 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Veri Sayfası
255Stokta Var
240Beklenen 13.08.2026
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Veri Sayfası
422Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Veri Sayfası
68Stokta Var
240Beklenen 16.02.2026
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 4.7 A 455 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Veri Sayfası
300Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Veri Sayfası
251Stokta Var
Min.: 1
Çoklu.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Veri Sayfası
173Stokta Var
960Beklenen 7.05.2026
Min.: 1
Çoklu.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Veri Sayfası
159Stokta Var
240Beklenen 12.02.2026
Min.: 1
Çoklu.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 5.7 V 13 nC - 55 C + 150 C 94 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Veri Sayfası
80Stokta Var
480Beklenen 5.08.2026
Min.: 1
Çoklu.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 13 A 220 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC