Ayrık Yarı İletken Çeşitleri
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Toshiba TPH2R70AR5 N Kanallı MOSFET
10.17.2025
10.17.2025
Ideal for high-efficiency DC-DC converters and is available in a SOP Advance (N) package.
Toshiba XCEZ Otomotiv Zener Diyotları
08.29.2025
08.29.2025
Feature 150mW and 300mW power dissipation and are AEC-Q101 qualified.
Toshiba TRSx SiC Schottky Barrier Diodes
04.04.2025
04.04.2025
These SiC Schottky barrier diodes have a repetitive peak reverse voltage (VRRM) rating of 1200V.
Toshiba L-TOGL & S-TOGL AEC-Q 40V/80V/100V N-Ch MOSFETs
10.14.2024
10.14.2024
Housed in L-TOGL™ package to meet the growing demand for 48V batteries in automotive equipment.
Toshiba TKx Silicon N-Channel MOSFETs
09.13.2024
09.13.2024
Available in U-MOSX-H and DTMOSVI types and offers exceptional performance characteristics.
Toshiba TPH1400CQ5 Silicon N-Channel MOSFETs
09.10.2024
09.10.2024
Features an 8-pin SMT power MOSFET designed with a U-MOSX-H generation Trench process.
Toshiba TPH1100CQ5 Silicon N-Channel MOSFETs
08.12.2024
08.12.2024
Features an 8-pin SMT power MOSFET designed with a U-MOSX-H generation Trench process.
Toshiba UMOS9-H Silicon N-channel MOSFETs
05.13.2024
05.13.2024
Ideal for high-efficiency DC-to-DC converters, switching voltage regulators, and motor drivers.
Toshiba XCUZ Zener Diodes
01.23.2024
01.23.2024
Designed for automotive usage, features 600mW power dissipation and AEC-Q101 qualified.
Toshiba TRSx65H SiC Schottky Barrier Diodes
07.26.2023
07.26.2023
650V devices based on third-generation technology utilizing Schottky metal.
Toshiba SSM14N956L MOSFET
06.09.2023
06.09.2023
Features low source-source on-resistance and is RoHS compatible.
Toshiba XPQR3004PB 40V 400A Automotive MOSFET
02.13.2023
02.13.2023
Offers RDS(ON) of 0.23mΩ (typical) and threshold voltage (Vth) of 2V to 3V, capable of 400A.
Toshiba 650V & 1200V 3rd Gen Silicon Carbide MOSFETs
07.11.2022
07.11.2022
Designed for high-power industrial applications like 400V and 800V AC input AC-DC power supplies.
Toshiba TPH9R00CQH Silicon N-Channel MOSFET
03.23.2022
03.23.2022
Offers high-speed switching with a small output and gate charge in an SOP-8 package.
Toshiba Gate Driver + MOSFET for 5V to 24V Line Power MUX
03.11.2022
03.11.2022
Addresses a variety of challenges present in power multiplexing and supports 5V to 24V powerlines.
Görüntülenen: 1 - 16 / 16
Littelfuse SP1120-01WTG Unidirectional Discrete TVS Diode
03.09.2026
03.09.2026
Proprietary silicon avalanche technology and offers high ESD protection for electronic equipment.
Qorvo QPD2560L 300W GaN/SiC HEMT
03.09.2026
03.09.2026
Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.
Diotec Semiconductor BZX84B4V3-AQ Zener Diode
03.06.2026
03.06.2026
Features 4.3V nominal Zener voltage with ±2% tolerance and 3μA leakage current at 1V.
Diotec Semiconductor SIT04C065 SiC Schottky Diode
03.06.2026
03.06.2026
Supports a 650V repetitive peak reverse voltage and delivers a 4A average forward rectified current.
Diotec Semiconductor MM5Z6V8B-AQ Zener Diode
03.06.2026
03.06.2026
Housed in an ultra‑small SOD‑523 surface‑mount package and AEC‑Q101 qualified.
Diotec Semiconductor TPSMA6L20A-AQ TVS Diode
03.06.2026
03.06.2026
AEC‑Q101 qualified unidirectional diode built in compact SMAF (DO‑221AC) low‑profile package.
Diotec Semiconductor BZX84B20-AQ Zener Diode
03.06.2026
03.06.2026
Features 20V nominal Zener voltage, 0.050µA leakage current, and 55Ω dynamic resistance.
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
03.06.2026
03.06.2026
Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.
Diotec Semiconductor MMS3Z18BGW-AQ Zener Diode
03.06.2026
03.06.2026
Housed in a compact SOD‑323 surface‑mount package, providing a 300mW power dissipation.
Diotec Semiconductor MM3Z3V0-AQ Zener Diode
03.06.2026
03.06.2026
Offers a 300mW power dissipation rating and comes in a compact SOD‑323F surface‑mount package.
Infineon Technologies N-Channel OptiMOS™ 7 80V Power MOSFETs
03.05.2026
03.05.2026
80V, N-channel, normal level devices with superior thermal resistance in a PG‑TDSON‑8 package.
Littelfuse Sx4340L TVS Diode Arrays
03.05.2026
03.05.2026
Offers 0.55pF ultra-low capacitance in a space-saving SOD882 package.
EPC EPC2305 Enhancement-Mode GaN Power Transistor
03.05.2026
03.05.2026
Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.
EPC EPC2302 Enhancement-Mode GaN Power Transistor
03.05.2026
03.05.2026
Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.
EPC EPC2304 Enhancement-Mode GaN Power Transistor
03.05.2026
03.05.2026
Handles tasks where ultra-high switching frequency and low on-time are advantageous.
Diotec Semiconductor GBI40M-T Single Phase Bridge Rectifier
03.03.2026
03.03.2026
Equipped with four diodes in a bridge configuration and protected against reverse assembly.
Diotec Semiconductor SL1MR13 Standard Recovery Rectifier
03.03.2026
03.03.2026
Features 1000V repetitive peak reverse voltage and 1A maximum average forward rectified current.
Diotec Semiconductor SB1100 Schottky Diode
03.03.2026
03.03.2026
Offer low voltage forward drop making it suitable for output rectification and polarity protection.
Diotec Semiconductor BAT54WT Schottky Diode
03.03.2026
03.03.2026
Designed for high-speed switching, low junction capacitance, and low leakage current.
Vishay 3KDFN12CA thru 3KDFN100CA TVS Diodes
03.02.2026
03.02.2026
Transzorb® TVS diodes, designed to protect sensitive electronics from voltage spikes.
Navitas Semiconductor NV6427 Bi-Directional GaNFast™ Power Switches
02.26.2026
02.26.2026
Switches are designed to block voltage in both directions, with unique substrate-clamp technology.
Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches
02.26.2026
02.26.2026
Designed to block voltage in both directions using unique substrate clamp technology.
Navitas Semiconductor NV60x GaNFast™ Power FETs
02.26.2026
02.26.2026
Enhancement‑mode GaN power devices engineered for fast‑switching, high‑efficiency power systems.
Littelfuse SC3402-02ETG ESD Koruma Diyodu
02.23.2026
02.23.2026
Ultra-low capacitance ESD protection diode designed to safeguard high-speed data interfaces.
Taiwan Semiconductor TESDA1L2B17P1Q1 ESD Protection Diode
02.19.2026
02.19.2026
Safeguards power interfaces, control lines, or low‑speed data lines within electronic systems.
Görüntülenen: 1 - 25 / 1221
