Yeni RF Transistörler
Ampleon BLF981/BLF981S Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) Power Transistors are 170W devices designed for high-efficiency broadband applications across a wide frequency range from HF to 1400MHz. These transistors are particularly well-suited for use in broadcast transmitters, industrial, scientific, medical (ISM), avionics, and other non-cellular communication systems. Built to withstand extreme operating conditions, the Ampleon BLF981/BLF981S offers excellent ruggedness, high power gain, and integrated dual-sided ESD protection. The devices are optimized for both analog and digital signal transmission, ensuring reliable performance and easy power control. The BLF981 is housed in a SOT467C package, while the BLF981S comes in a SOT467B package, both supporting robust thermal management and long-term reliability.
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Ampleon BLF981/BLF981S LDMOS Power TransistorsDesigned for high-efficiency broadband applications across a frequency range from HF to 1400MHz.15.05.2025
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Ampleon BLP981 LDMOS Power Transistor170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.15.05.2025 -
Mini-Circuits TAV1 TransistorsDesigned with highly repeatable D-pHEMT and E-pHEMT technology in a small 1.4mm x 1.2mm package.01.12.2023 -
CEL Low Noise FETs & ICsDeliver exceptional noise performance even beyond 20GHz with high associated gains.09.07.2023 -
Nexperia SOT23 Surface-Mounted Package ProductsContained in a plastic, surface-mounted, three terminals, 1.9mm pitch, 2.9mm x 1.3mm x 1mm package.26.07.2022 -
Nexperia SOT323 Surface-Mounted Package ProductsA plastic, 3 leads, 1.3mm pitch, 2mm x 1.25mm x 0.95mm body surface-mounted package.26.07.2022 -
Qorvo QPD2160D 1600µm Discrete GaAs pHEMTProvides 32.5dBm of output power at P1dB, 10.4dB gain, and 63% power-added efficiency at 1dB.19.04.2022 -
Qorvo QPD2120D 1200µm Discrete GaAs pHEMTProvides 31dBm of output power at P1dB, 11.5dB gain, and 57% power-added efficiency at 1dB.19.04.2022 -
Qorvo QPD2080D 800µm Discrete GaAs pHEMTProvides 29.5dBm of output power at P1dB, 11.5dB gain, and 56% power-added efficiency at 1dB.19.04.2022 -
Qorvo QPD2060D 600µm Discrete GaAs pHEMTProvides 28dBm of output power at P1dB, 12dB gain, and 55% power-added efficiency at 1dB.19.04.2022 -
Qorvo QPD2040D 400um Discrete GaAs pHEMT DieDesigned using Qorvo's proven standard 0.25um power pHEMT production process.14.02.2022 -
Qorvo QPD2018D 180um Discrete GaAs pHEMT DieUtilizes Qorvo's proven standard 0.25um power pHEMT production process.14.02.2022 -
Qorvo QPD2025D 250um Discrete GaAs pHEMT DieDeveloped using Qorvo's proven standard 0.25um power pHEMT production process.14.02.2022