Yeni IGBTs

Infineon 750V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature a DTO247 package and replace multiple lower-current transistors in standard TO247 packages connected in parallel. The DTO247 package is twice the size of a standard TO247 and is compatible with DTO247- and TO247-based architectures within the same system for improved flexibility and customization. The TRENCHSTOP DTO247 design enables high power density while bridging the gap between TO247-based designs and module architectures. The 2mm wide leads provide optimal conduction, while the 10mm creepage distance offers enhanced safety and reliability. The package includes a 7mm pin-to-pin clearance and an integrated Kelvin emitter pin for faster, more efficient switching. These 750V transistors from Infineon are designed to simplify and shorten the development time of cost-effective, scalable architectures for high-current applications, including solar inverters, energy storage systems (ESS), and uninterruptible power supplies (UPS).
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Infineon Technologies 750V TRENCHSTOP™ IGBT7 H7 Discrete TransistorsDTO247 package, replaces multiple lower-current transistors in TO247 packages connected in parallel.01.12.2025 -
onsemi AFGB30T65RQDN IGBTOffers a high figure of merit with low conduction and switching losses.19.11.2025 -
onsemi AFGBG70T65SQDC N-Channel Field Stop IV IGBTThe device offers optimal performance with both low conduction and switching losses.13.10.2025 -
onsemi AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTsThe device offers good performance, with low on-state voltage and low switching losses.13.10.2025 -
STMicroelectronics STGWA30IH160DF2 1600V IH2 Series IGBTCreated by implementing an advanced proprietary trench gate field-stop structure.22.05.2025 -
ROHM Semiconductor RGE Field Stop Trench IGBTsFeatures low collector-emitter saturation voltage and low switching loss.15.01.2025 -
STMicroelectronics STGSH50M120D ACEPACK SMIT IGBT with DiodeCombines two IGBTs and diodes in a half-bridge topology.24.12.2024 -
ROHM Semiconductor RGA80Tx 1200V Field Stop Trench IGBTsThese feature low switching & conduction loss and are ideal for electric compressors and HV heaters.17.10.2024 -
STMicroelectronics STGHU30M65DF2AG Automotive-Grade IGBTDeveloped using an advanced trench gate field stop structure.12.09.2024 -
STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBTDesigned using an advanced proprietary trench gate field stop structure.12.09.2024 -
IXYS Gen5 XPT IGBT'lerOffers a rated voltage of 650V, a current range of 35A to 220A, and a low gate charge.25.07.2024 -
Infineon Technologies Automotive IGBT EDT2 Discretes750V IGBT technology that improves the energy efficiency for automotive drivetrain applications.19.07.2024 -
STMicroelectronics GWA40MS120DF4AG Automotive-grade MS Series IGBT1200V, 40A, low-loss, offers low thermal resistance, and comes in a TO-247 long leads package.03.07.2024 -
onsemi AFGHxL40T Automotive Grade IGBTsAEC-Q101 qualified and uses a robust Field Stop VII Trench construction.12.06.2024 -
onsemi FGB5065G2-F085 EcoSPARK® 2 HV-HE IGBT650V N-channel ignition device for PTC heater and high current system applications.04.06.2024 -
Diotec Semiconductor DIWOx Fast Switching IGBT TransistorsInclude a reverse diode and use Trench and Fieldstop technology in a TO-247 package.24.04.2024 -
PANJIT PTGH High-Speed 650V Field Stop Trench IGBTsOffer superior high-speed switching capabilities with a low saturation voltage of 1.65V at TVJ 25°C.12.04.2024 -
onsemi Heat PumpsThe heat pump stands as a cornerstone of the global shift towards secure and sustainable heating.01.03.2024 -
onsemi AFGHL50T65RQDN 650V 50A IGBT4th generation field-stop IGBT that utilizes innovative technology.01.03.2024 -
onsemi FGY4LxxT120SWD N-Channel 1200V IGBTsThe devices use the novel field stop 7th generation IGBT technology and the Gen7 Diode.07.02.2024 -
Bourns Electrification SolutionsTransformers, chokes, resistors, and other products designed for systems used in electrification.20.12.2023 -
onsemi FGHL60T120RWD 1200V 60A Discrete IGBTUses advanced 7th-generation IGBT technology and is housed in a TO247 3-lead package.29.11.2023 -
onsemi FGHL40T120RWD 1200V 40A Discrete IGBTUses 7th-generation IGBT technology and is housed in a TO247 3-lead package.29.11.2023 -
onsemi AFGHxL25T Single N-Channel 1200V 25A IGBTsThese devices feature a robust and cost-effective Field Stop VII Trench construction.22.11.2023 -
onsemi FGY140T120SWD 1200V 140A Fast Discrete IGBTEquipped with advanced 7th-generation IGBT technology.13.11.2023 -
