Vishay / Siliconix TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

Features

  • P-Channel MOSFETs
    • Reduced on-resistance by up to 45% for p-channel devices
    • Provides lower conduction losses, saving power
    • Longer time between charges for battery-powered applications
    • Employs either Gen-III or Gen-IV technology
    • Greener use of power
    • Gen-IV P-channel MOSFETs
      • Offer low on-resistance
      • Come in a thermally enhanced compact package
    • Variety of package sizes, from PowerPAK SO-8 down to 1.6mm x 1.6mm PowerPAK SC-75
    • Breakdown voltage 12V to 200V
  • N-Channel MOSFETs
    • 30V to 250V drain-source breakdown voltage
    • 50A to 478A drain current
    • Up to 27mΩ resistance rating
    • ThunderFET power (depending on the model)
    • 125W to 375W power dissipation range
    • Employs either Gen-IV or Gen-V technology

Applications

  • P-Channel
    • Load switches
    • Smartphones
    • PDAs
    • MP3 players
    • Digital cameras
    • Camcorders
    • Battery and circuit protection
    • Motor drive control
    • Adapter and charger switch
    • Load switch
    • Battery management
  • N-Channel
    • Synchronous rectification
    • Synchronous buck converter
    • DC/DC converter
    • Primary side switch
    • Power tools
    • Motor drive switch
    • DC/AC inverters
    • Battery management
    • LED driver
    • Load switch
    • Power supplies
    • OR-ing and hot swap switch

Infographic

Vishay / Siliconix TrenchFET® MOSFETs
Yayınlandı: 2010-04-27 | Güncellenmiş: 2024-11-26